 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| RF2103P 2 Typical Applications * Digital Communication Systems * Portable Battery-Powered Equipment * Spread-Spectrum Communication Systems * Commercial and Consumer Systems * Driver for Higher Power Linear Applications * Base Station Equipment MEDIUM POWER LINEAR AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz. It may also be used as a driver amplifier in higher power applications. The device is self-contained with the exception of the output matching network, power supply feed line, and bypass capacitors, and it produces an output power level of 750mW (CW). The device can be used in 3 cell battery applications. The maximum CW output at 3.6V is 175mW. The unit has a total gain of 31dB, depending upon the output matching network. 0.156 0.148 .018 .014 0.010 0.004 0.347 0.339 0.050 0.252 0.236 0.059 0.057 8 MAX 0 MIN 0.0500 0.0164 0.010 0.007 Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS u Package Style: SOIC-14 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * 450MHz to 1000MHz Operation * Up to 750mW CW Output Power * 31dB Small Signal Gain * Single 2.7V to 7.5V Supply * 47% Efficiency * Digitally Controlled Power Down Mode RF IN 1 GND 2 GND 3 PD 4 VCC1 5 VCC2 6 PRE AMP PWR 7 PRE AMP FPA 14 RF OUT 13 RF OUT 12 GND 11 GND 10 GND 9 RF OUT 8 RF OUT BIAS CIRCUITS Ordering Information RF2103P RF2103P PCBA Medium Power Linear Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B1 010720 2-1 RF2103P Absolute Maximum Ratings Parameter Supply Voltage Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Operating Case Temperature Operating Ambient Temperature Storage Temperature Rating -0.5 to +7.5 -0.5 to +5 350 +12 10:1 -40 to +100 -40 to +85 -40 to +150 Unit VDC V mA dBm C C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Maximum Output Power Maximum Output Power Second Harmonic Third Harmonic Output Noise Power Input Impedance Input VSWR Output Impedance Specification Min. Typ. Max. Unit Condition T=25 C, VCC =5.8V, VPD =5.0V, ZLOAD =18, PIN =0dBm, Freq=915MHz 450 to 1000 +28.8 +26.5 -24 -30 <-125 50 <2:1 18+j0 MHz dBm dBm dBc dBc dBm/Hz VCC =7.5V VCC =5.8V Without external second harmonic trap Nominal 5.8V Configuration Linear Power Gain Saturated CW Output Power IM3 IM5 Collector Current, ICC VPD Current CW Total Efficiency Two Tone Total Efficiency 24 31 +26.5 -40 -45 175 <3.5 47 26 2.7 to 7.5 45 1 <100 dB dBm dBc dBc mA mA % % V mA A ns With external matching network; see application schematic With external matching network; see application schematic Load Impedance for Optimal Match VCC =5.8V, VPD =4.0V, ZLOAD =18, PIN =0dBm, Freq=830MHz -25 -30 250 POUT =+18.5dBm/tone POUT =+18.5dBm/tone Total of pins 7 and 8 Into pin 4 POUT =+18.5dBm/tone Power Supply Power Supply Voltage Power Supply Idle Current Total "OFF" Current Drain Turn-on Time 80 10 VPD <0.1VDC VPD =0 to VPD =+4VDC 2-2 Rev B1 010720 RF2103P Pin 1 2 3 4 Function RF IN GND GND PD Description RF input pin. There is an internal blocking capacitor between this pin and the preamp input, but not between the pin and an internal 2k resistor to ground. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Same as pin 2. Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at VCC (3V to 6.5V), the device will be in full power mode delivering maximum available gain and output power capability. This pin may also be used to perform some degree of gain control or power control when set to voltages between 0V and VCC. It is not optimized for this function so the transfer function is not linear over a wide range as with other devices specifically designed for analog gain control; however, it may be usable for coarse adjustment or in some closed loop AGC systems. This pin should not, in any circumstance, be higher in voltage than VCC. This pin should also have an external bypassing capacitor. Positive supply for the active bias circuits. This pin can be externally combined with pin 6 (VCC2) and the pair bypassed with a single capacitor, placed as close as possible to the package. Additional bypassing of 1 F is also recommended, but proximity to the package is not as critical. In most applications, pins 5, 6, and 7 can share a single 1 F bypass capacitor. Same as pin 5. Positive supply for the pre-amplifier. This is an unmatched transistor collector output. This pin should see an inductive path to AC ground (VCC with bypass capacitor). This inductance can be achieved with a short, thin microstrip line or with a low value chip inductor (approximately 1.8nH). At lower frequencies, the inductance value should be larger (longer microstrip line) and VCC should be bypassed with a larger bypass capacitor. This inductance forms a matching network with the internal series capacitor between the two amplifier stages, setting the amplifier's frequency of maximum gain. An additional 1F bypass capacitor in parallel with the 100pF bypass capacitor is also recommended, but placement of this component is not as critical. In most applications, pins 5, 6, and 7 can share a single 1F bypass capacitor. Same as pin 14. Same as pin 14. Same as pin 2. Same as pin 2. Same as pin 2. Same as pin 14. Interface Schematic 2 POWER AMPLIFIERS 5 VCC1 6 7 VCC2 PREAMP PWR 8 9 10 11 12 13 RF OUT RF OUT GND GND GND RF OUT Rev B1 010720 2-3 RF2103P Pin 14 Function RF OUT Description Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. It is internally connected to pins 8, 9, 13 and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through two of these four pins. Typically, pins 8 and 9 are connected to a network that provides the DC bias and also creates a second harmonic trap. For 915MHz operation, this harmonic trap network is simply a single 2pF capacitor from both pins to ground. This capacitor series resonates with internal bond wires at two times the operating frequency, effectively shorting out the second harmonic. Shorting out this harmonic serves to increase the amplifier's maximum output power and efficiency, as well as to lower the level of the second harmonic output. Typically, pins 13 and 14 are externally connected very close to the package and used as the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. Shunt protection diodes are included to clip peak voltage excursions above approximately 15V to prevent voltage breakdown in worst case conditions. Interface Schematic 2 POWER AMPLIFIERS Application Schematic 6.8 nH RF IN 12 nH 22 1 PRE AMP 2 3 VB VCC For lower frequency operation: Cut trace on board and insert inductor L4 1 F 100 pF 100 pF 4 5 6 7 100 pF .01" x .2" (PCB material: FR-4, Thickness:0.031") BIAS CIRCUITS 11 10 9 L2 8 C2 330 pF VCC FPA 14 C1 13 12 For lower frequency operation: Cut trace on board and insert inductor L3 L1 RF OUT FREQUENCY (MHz) L1 (nH) 275 480 915 20 12 6.8 L2 (nH) 15 6.8 3.3 L3 (nH) 10 4.7 L4 (nH) 20 18 C1 (pF) 20 12 4 C2 (pF) 10 6.8 2 2-4 Rev B1 010720 RF2103P Evaluation Board Schematic 915MHz Operation (Download Bill of Materials from www.rfmd.com.) P1-1 1 2 VCC GND VB P1-3 3 2103400 Rev C SMA J1 50 strip RF IN L3 12 nH L4 6.8 nH R1 22 1 2 3 4 5 6 P1-1 7 PRE AMP FPA 14 50 strip 13 12 11 10 9 8 L2 3.3 nH C7 2 pF C5 330 pF P1-1 C4 4 pF L1 6.8 nH RF OUT J2 50 Matching Network P1-3 P1-1 C1 100 pF BIAS CIRCUITS C2 100 pF C3 100 pF C9 100 pF C10 0.01" x 0.2" 100 pF (PCB mat'l: FR-4, Thickness: 0.031") Rev B1 010720 2-5 POWER AMPLIFIERS C6 1 nF C8 1 nF P1 2 RF2103P Evaluation Board Layout 1.4" x 1.4" 2 POWER AMPLIFIERS 2-6 Rev B1 010720 RF2103P Gain and Pout vs. Pin Vcc=Vb=3.6 V, 915 MHz 35 75 Eff (+25C) 30 60 25 Icc (+25C) Eff (-40C) Icc (-40C) Eff (+85C) Icc (+85C) 210 Efficiency and Icc vs. Pout Vcc=Vb=3.6 V, 915 MHz 260 Gain (dB), Pout (dBm) Efficiency (%) Icc (mA) 15 30 110 10 Pout (+25C) 5 Pout (-40C) Pout (+85C) 0 -25 -20 -15 -10 -5 0 5 Gain (+25C) Gain (-40C) Gain (+85C) 0 0 5 10 15 20 25 30 10 15 60 Pin (dBm) Pout (dBm) Gain and Pout vs. Pin Vcc=Vb=4.8 V, 915 MHz 35 75 Efficiency and Icc vs. Pout Vcc=Vb=3.6 V, 915 MHz 260 Eff (+25C) Eff (-40C) Icc (-40C) Eff (+85C) Icc (+85C) 210 30 60 25 Icc (+25C) Gain (dB), Pout (dBm) Efficiency (%) 15 30 110 10 Pout (+25C) 5 Pout (-40C) Pout (+85C) 0 -25 -20 -15 -10 -5 0 5 Gain (+25C) Gain (-40C) Gain (+85C) 0 0 5 10 15 20 25 30 10 15 60 Pin (dBm) Pout (dBm) Gain and Pout vs. Pin Vcc=6.0 V, Vb=5.0 V, 915 MHz 35 75 Efficiency and Icc vs. Pout Vcc=6.0 V, Vb=5.0 V, 915 MHz 260 Eff (+25C) Eff (-40C) Icc (-40C) Eff (+85C) Icc (+85C) 210 30 60 25 Icc (+25C) Gain (dB), Pout (dBm) Efficiency (%) 15 30 110 10 Pout (+25C) 5 Pout (-40C) Pout (+85C) 0 -25 -20 -15 -10 -5 0 5 Gain (+25C) Gain (-40C) Gain (+85C) 0 0 5 10 15 20 25 30 10 15 60 Pin (dBm) Pout (dBm) Rev B1 010720 Icc (mA) 20 45 160 Icc (mA) 20 45 160 2-7 POWER AMPLIFIERS 20 45 160 2 RF2103P IM3, IM5, and IM2 vs. Pout Vcc=Vb=3.6 V, 915 MHz 0 IM3 2Fo -10 IM5 IM2 -20 -10 5Fo 6Fo 7Fo 3Fo 4Fo 0 Harmonics vs. Pout Vcc=Vb=3.6 V, 915 MHz Intermodulation Products (dBc) 2 POWER AMPLIFIERS Harmonic Level (dBc) -15 -10 -5 0 5 10 15 20 25 -20 -30 -30 -40 -40 -50 -50 -60 -60 5 10 15 20 25 30 Pout per Tone (dBm) Fundamental Pout (dBm) IM3, IM5, and IM2 vs. Pout Vcc=Vb=4.8 V, 915 MHz 0 IM3 2Fo -10 IM5 IM2 -20 -10 5Fo 0 Harmonics vs. Pout Vcc=Vb=4.8 V, 915 MHz 3Fo 6Fo 4Fo 7Fo Intermodulation Products (dBc) Harmonic Level (dBc) -15 -10 -5 0 5 10 15 20 25 -20 -30 -30 -40 -40 -50 -50 -60 -60 5 10 15 20 25 30 Pout per Tone (dBm) Fundamental Pout (dBm) IM3, IM5, and IM2 vs. Pout Vcc=6.0 V, Vb=5.0 V, 915 MHz 0 IM3 2Fo -10 IM5 IM2 -20 -10 5Fo 0 Harmonics vs. Pout Vcc=6.0 V,Vb=5.0 V, 915 MHz 3Fo 6Fo 4Fo 7Fo Intermodulation Products (dBc) Harmonic Level (dBc) -15 -10 -5 0 5 10 15 20 25 -20 -30 -30 -40 -40 -50 -50 -60 -60 5 10 15 20 25 30 Pout per Tone (dBm) Fundamental Pout (dBm) 2-8 Rev B1 010720 RF2103P Pout vs. Vb Vcc=3.6 V, Pin=0 dBm, 915 MHz 30 +25C 20 -40C +85C 10 60 75 +25C -40C +85C Efficiency vs. Vb Vcc=3.6 V, Pin=0 dBm, 915 MHz Efficiency (%) Pout (dBm) 45 2 POWER AMPLIFIERS 0.0 1.0 2.0 3.0 4.0 5.0 0 30 -10 15 -20 -30 0.0 1.0 2.0 3.0 4.0 5.0 0 Vb (Volts) Vb (Volts) Pout vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz 30 +25C 20 -40C +85C 10 60 75 Efficiency vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz +25C -40C +85C Efficiency (%) Pout (dBm) 45 0 30 -10 15 -20 -30 0.0 1.0 2.0 3.0 4.0 5.0 0 0.0 1.0 2.0 3.0 4.0 5.0 Vb (Volts) Vb (Volts) Pout vs. Vb Vcc=6.0 V, Pin=0 dBm, 915 MHz 30 +25C 20 -40C +85C 10 60 75 Efficiency vs. Vb Vcc=6.0 V, Pin=0 dBm, 915 MHz +25C -40C +85C Efficiency (%) Pout (dBm) 45 0 30 -10 15 -20 -30 0.0 1.0 2.0 3.0 4.0 5.0 0 0.0 1.0 2.0 3.0 4.0 5.0 Vb (Volts) Vb (Volts) Rev B1 010720 2-9 RF2103P 30 Psat vs. Vcc Vb=Vcc; Vb 5.0 V, 915 MHz Two Tone Pout vs. Pin, 915 MHz 35 25 30 25 Psat (dBm) 2 POWER AMPLIFIERS 20 Pout, per Tone (dBm) 20 15 15 10 10 Vcc=Vb=3.6V 5 Vcc=Vb=4.8V Vcc=6.0V, Vb=5.0V 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 -25 -20 -15 -10 -5 0 5 5 Vcc (Volts) Pin, per Tone (dBm) Vb Required to Achieve Specific Pout (Vb<5.0 V, 915 MHz) 5 27dBm 24dBm 4 21dBm 18dBm 80 100 Two Tone Efficiency and Icc vs. Pout, 915 MHz 260 Eff (Vcc=Vb=3.6V) Eff (Vcc=Vb=4.8V) Eff (Vcc=6.0V, Vb=5.0V) Icc (Vcc=Vb=3.6V) 210 Two Tone Efficiency (%) Vb (Volts) 3 60 Icc (Vcc=6.0V, Vb=5.0V) 160 2 40 110 1 20 60 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 0 5 10 15 20 25 30 10 Vcc (Volts) Pout, per Tone (dBm) 2-10 Rev B1 010720 Two Tone Icc (mA) 15dBm Icc (Vcc=Vb=4.8V) |
Price & Availability of RF2103PPCBA
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |